A Hybrid Dynamic Voltage Sharing Scheme for Series-connected SiC MOSFETs with Single Gate Drive

نویسندگان

چکیده

Abstract At present, the voltage level of a commercial SiC MOSFET can hardly meet requirements high-voltage field. For sake achieving application MOSFETs in fields, method series-connected has become practical and effective solution. However, multiple face problem unbalance, especially dynamic unbalance. Generally, unbalance could be solved using load side sharing schemes or methods gate side. This paper uses hybrid scheme for single-driven MOSFETs. That is to say, based on sequential lagging single drive topology, combining active clamping circuits with RCD snubber are introduced solve unbalancing whole module this paper. Compared circuit without any scheme, imbalance degree decreased 3.75% during switching-on switching-off periods. The equalization effect would verified through simulation under clamped inductive LTspice.

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ژورنال

عنوان ژورنال: Journal of physics

سال: 2022

ISSN: ['0022-3700', '1747-3721', '0368-3508', '1747-3713']

DOI: https://doi.org/10.1088/1742-6596/2401/1/012052